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PolarHV TM HiPerFET
Power MOSFET
ISOPLUS220 TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFC 22N60P
V DSS = 600 V
I D25 = 12 A
R DS(on) ≤ 360 m ?
t rr ≤ 200 ns
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Tranisent
600
600
± 30
± 40
V
V
V
V
ISOPLUS220 TM (IXFC)
E153432
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
12
66
A
A
G
D
S
(Isolated back surface*)
I AR
E AR
E AS
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
22
40
1.0
A
mJ
J
G = Gate
S = Source
Features
D = Drain
dv/dt
P D
T J
T JM
T stg
T L
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 4 ?
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
10
130
-55 ... +150
150
-55 ... +150
300
V/ns
W
° C
° C
° C
° C
l
l
l
l
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
V ISOL
50/60 Hz, RMS
t = 1 minute leads-to-tab
2500
V~
l
Fast intrinsic Rectifier
DC-DC converters
F C
Mounting Force
11..65/2.5..15
N/lb
Applications
l
Weight
2
g
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
l
l
DC choppers
AC motor control
Easy assembly: no screws, or isolation
BV DSS
V GS = 0 V, I D = 250 μ A
600
V
Advantages
l
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4 mA
V GS = ± 30 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 125 ° C
3.0
5.0
± 100
25
250
V
nA
μ A
μ A
l
l
l
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
R DS(on)
V GS = 10 V, I D = I T , Note 1
360
m ?
? 2006 IXYS All rights reserved
DS99439E(02/06)
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